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Crystal Growth Applications

Crystal growth modeling has been one of the primary focuses of Cape Simulations since its inception. Since 1992 Cape Simulations, and before that its founder Dr. Motakef, have made significant contributions to this field (see our publications list).

We have used computer modeling to help many commercial materials producers increase process yield, scale up to larger size charges, design new growth hardware, and improve the properties of their crystals.

We have also worked on a number of large NASA materials programs, using the micro-gravity environment of space to advance the science of crystal growth.

We have developed models for nearly all bulk and epitaxial crystal growth processes, involving a wide range of materials. The following is a table of processes and materials for which we have developed computer models.

Bulk Growth
  Si GaAs InP Ge GeSi CdTe,
CdZnTe
HgCdTe,
HgMnTe
BSO,
BGO
LiNO3 SiC CaF2 ZnSe YVO4
Czochralski X     X         X       X
Liquid Encapsulated Czochralski   X X                    
Vertical Bridgman   X X X X X X X     X    
Magnetic-Vertical Bridgman   X X X X   X            
Vertical Gradient Freeze   X X   X X              
Zone Melting   X                      
Horizontal Bridgman           X              
Float Zone X                        
Physical Vapor Transport                   X   X  
Solution Growth (THM)           X              


Epitaxy
  HgCdTe Si III-V GaN SiC
Liquid Phase Epitaxy X        
Chemical Vapor Deposition   X      
MOCVD Single Wafer     X X X
MOCVD Planetary Reactor     X X  
High Temperature CVD         X


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